| PART |
Description |
Maker |
| BUL65A |
ADVANCED DISTRIBUTED BASE DESIGN
|
Seme LAB
|
| BUL55B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
|
| BUL58A BUL56A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
|
| BUL52A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
Seme LAB
|
| BUL52B BUL52 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| BUL50A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
Seme LAB
TT electronics Semelab Limited
|
| BUL76A |
POWERLINE: RP20-S_DEW - 4:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 84%
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
Seme LAB
|
| DS1200-3-003 DS1200-3-004 DS1200 DS1200-3-002 DS12 |
AC-DC / Distributed Power Front-End 1U
1200 Watts Distributed Power System
|
Emerson Network Power
|
| XD1004-BD-EV1 XD1004-BD-000V |
10.0-40.0 GHz GaAs MMIC Distributed Amplifier 10000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
10.0-40.0 GHz GaAs MMIC Distributed Amplifier 10.0-40.0千兆赫的GaAs MMIC分布式放大器
|
Mimix Broadband, Inc.
|
| XD1005-QT-EV1 XD1005-QT-0G00 MIMIXBROADBANDINC.-XD |
10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN 10000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN 10.0-40.0千兆赫的GaAs MMIC分布式放大器QFN封装
|
Mimix Broadband, Inc.
|
| TMPN3120FE3MG |
Neuron? Chip for Distributed Intelligent Control Networks (LONWORKS)
Neuron㈢ Chip for Distributed Intelligent Control Networks (LONWORKS)
|
TOSHIBA[Toshiba Semiconductor]
|
